- DL manuals
- M-Systems Flash Disk Pioneers
- Storage
- Flash Memory
- User Manual
M-Systems Flash Disk Pioneers Flash Memory User Manual
Summary of Flash Memory
Page 1
White paper implementing mlc nand flash for cost-effective, high-capacity memory written by: raz dan and rochelle singer january 2003 91-sr-014-02-8l, rev 1.0
Page 2: Introduction
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 2 introduction multi-level cell (mlc) technology greatly reduces flash die size to achieve a breakthrough cost structure. It does this by storing 2 bits of data per physical cell instead of the traditional 1 bit per...
Page 3
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 3 of nor flash and achieving barely adequate reliability, but it has serious limitations: its performance is far slower than standard nor flash. Nand flash appeared to be the ideal media for data storage, due to its...
Page 4
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 4 e - oxide floating gate select gate source drain substrate program (inject electrons) erase (remove electrons) figure 1: a basic flash cell binary and mlc technologies in flash devices that implement binary flash ...
Page 5: Mlc Benefits and Limitations
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 5 mlc benefits and limitations mlc high-density design innovations reduce the silicon die size, which is the major element contributing to overall device cost. For mlc nand, this reduction in size and cost is greate...
Page 6
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 6 read disturb errors the read disturb effect causes a page read operation to induce a permanent, bit value change in one of the read bits. In binary flash technology based on a 0.16 µ manufacturing process, the typ...
Page 7
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 7 sustained read when comparing sustained read performance values in real-world scenarios for binary flash with mlc, the gap lessens considerably: mlc performance is 98 percent of binary flash performance. Operation...
Page 8: Overcoming Mlc Limitations
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 8 overcoming mlc limitations because mlc technology can potentially bring the industry breakthrough cost and size benefits for local data and code storage, m-systems chose to take on the challenge of perfecting it b...
Page 9
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 9 table 1 maps the various features of x2 technology against the three major areas of mlc limitations that they overcome. The remainder of this section explains how each feature achieves these enhancements in mobile...
Page 10
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 10 enhanced edc and ecc the error detection code (edc) and error correction code (ecc) developed for x2 technology is based on m-systems’ highly effective combination used in previous generation diskonchip products....
Page 11
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 11 efficient bad block handling x2 technology handles bad blocks, which can be randomly present in flash media, by enabling unaligned block access to two planes. Bad blocks are mapped individually on each plane, as ...
Page 12
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 12 multiburst to improve mlc read performance rates, x2 technology incorporates a feature called multiburst. Multiburst enables parallel read access from two 16-bit planes to the flash controller, thereby achieving ...
Page 13: Power Consumption
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 13 parallel multiplane access as discussed earlier, the mlc flash media is built of two planes that can operate in parallel. This architecture is one of the most powerful, x2 technology innovations, doubling read, w...
Page 14: How to Contact Us
Implementing mlc nand flash for cost-effective, high-capacity memory 91-sr-014-02-8l 14 how to contact us website: http://www.M-sys.Com general information: info@m-sys.Com technical information: techsupport@m-sys.Com usa m-systems inc. 8371 central ave, suite a newark ca 94560 phone: +1-510-494-2090...