Panasonic MA116 Specifications
Switching Diodes
1
Publication date: March 2004
SKF00014BED
MA2J116
(MA116)
Silicon epitaxial planar type
For general purpose
■ Features
• Allowing high-density mounting
• Soft recovery characteristic: t
rr
= 100 ns
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
40
V
Maximum peak reverse voltage
V
RM
40
V
Forward current (Average)
I
F(AV)
100
mA
Peak forward current
I
FM
225
mA
Non-repetitive peak forward
I
FSM
500
mA
surge current
*
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 100 mA
1.2
V
Reverse voltage
V
R
I
R
= 100 µA
35
V
Reverse current
I
R1
V
R
= 15 V
5
nA
I
R2
V
R
= 40 V
10
I
R3
V
R
= 35 V, T
a
= 100°C
100
µA
Terminal capacitance
C
t
V
R
= 6 V, f = 1 MHz
1.0
2.0
pF
Forward dynamic resistance
*1
r
f
I
F
= 3 mA, f = 30 MHz
3.6
Ω
Reverse recovery time
*2
t
rr
I
F
= 10 mA, V
R
= 6 V
100
ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: 1H
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse
Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *1: YHP 4191A RF IMPEDANCE ANALYZER
*2: t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
1: Anode
2: Cathode
EIAJ: SC-76
SMini2-F1 Package
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±
0.2
1.7
±
0.1
0.4
±
0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Note) *: t
= 1 s
This product complies with the RoHS Directive (EU 2002/95/EC).