Panasonic MA21D382G Specification Sheet
Schottky Barrier Diodes (SBD)
Publication date: January 2008
SKH00223AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA21D382G
Silicon epitaxial planar type
For high frequency rectification
Features
I
F(AV)
= 1.5 A recti
fi
cation is possible
Low forward voltage V
F
Large non-repetitive peak forward surge current I
FSM
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Maximum peak reverse voltage
V
RM
30
V
Forward current (Average)
I
F(AV)
1.5
A
Non-repetitive peak forward surge
current
*
I
FSM
30
A
Junction temperature
T
j
150
°
C
Storage time
T
stg
–55 to +150
°
C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
= 0.5 A
0.34
0.38
V
V
F2
I
F
= 1.0 A
0.38
0.42
V
F3
I
F
= 1.5 A
0.42
0.46
Reverse current
I
R
V
R
= 30 V
100
m
A
Terminal capacitance
C
t
V
R
= 10 V, f = 1 MHz
40
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100
W
13
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ω
t
p
= 2
µ
s
t
r
= 0.35 ns
δ
= 0.05
I
F
= I
R
= 100 mA
R
L
= 100
Ω
10%
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse
Output Pulse
Package
Code
SMini2-F2
Pin Name
1: Anode
2: Cathode
Marking Symbol: 4U