Panasonic MA27D30 Specification Sheet
Schottky Barrier Diodes (SBD)
1
Publication date:January 2004
SKH00134BED
MA27D30
Silicon epitaxial planar type
For super high speed switching
■ Features
• Small reverse current: I
R
< 2
µA (at V
R
= 30 V)
• Optimum for high frequency rectification because of its short
reverse recovery time t
rr
.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Repetitive peak reverse voltage
V
RRM
30
V
Forward current (Average)
I
F(AV)
100
mA
Peak forward current
I
FM
200
mA
Non-repetitive peak forward
I
FSM
1
A
surge current
*
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
= 10 mA
0.38
0.44
V
V
F2
I
F
= 100 mA
0.51
0.58
V
Reverse current
I
R1
V
R
= 10 V
0.3
µA
I
R2
V
R
= 30 V
2
µA
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
9
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
1
ns
I
rr
= 10 mA, R
L
= 100 Ω
■ Electrical Characteristics T
a
=
25
°C ±
3
°C
Marking Symbol: 8N
Unit: mm
5°
5
°
0.27
1
2
1.40
±0.05
0.52
±0.03
1.00
±0.05
0.60
±0.05
0.20
±0.05
0 to 0.01
0.20
±0.05
0.15 max.
+0.05
–0.02
0.12
+0.05
–0.02
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. *: t
rr
measurement circuit
1: Anode
2: Cathode
SSSMini2-F2 Package
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
90%
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse
Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
I
F
t
t
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form
Analyzer
(SAS-8130)
R
i
= 50 Ω
V
R
A
This product complies with the RoHS Directive (EU 2002/95/EC).