Panasonic MA2S7840G Specification Sheet
Schottky Barrier Diodes (SBD)
1
Publication date: October 2007
SKH00175AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2S7840G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• High-density mounting is possible
• Forward current (Average) I
F(AV)
= 100 mA rectification is possible
• Optimum for high frequency rectification because of its short
reverse recovery time t
rr
• Low forward voltage V
F
and good rectification efficiency
■ Absolute Maximum Ratings T
a
= 25°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Repetitive peak reverse voltage
V
RRM
30
V
Forward current (Average)
I
F(AV)
100
mA
Peak forward current
I
FM
300
mA
Non-repetitive peak forward
I
FSM
1
A
surge current
*
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 100 mA
0.55
V
Reverse current
I
R
V
R
= 30 V
15
µA
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
20
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
2.0
ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse
Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4. *: t
rr
measurement circuit
■ Package
• Code
SSMini2-F4
• Pin Name
1: Anode
2: Cathode
■ Marking Symbol: C