Panasonic MA3S132DG Specification Sheet
Switching Diodes
1
Publication date: October 2007
SKF00083AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Note) *: t
= 1 s
MA3S132DG, MA3S132EG
Silicon epitaxial planar type
For switching circuits
■ Features
• Short reverse recovery time t
rr
• Small terminal capacitance C
t
• Two isolated elements contained in one package, allowing high-
density mounting
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 100 mA
1.2
V
Reverse voltage
V
R
I
R
= 100 µA
80
V
Reverse current
I
R
V
R
= 75 V
100
nA
Terminal capacitance
MA3S132DG
C
t
V
R
= 0 V, f = 1 MHz
15
pF
MA3S132EG
2
Reverse recovery time
*
MA3S132DG
t
rr
I
F
= 10 mA, V
R
= 6 V
10
ns
MA3S132EG
I
rr
= 0.1 I
R
, R
L
= 100 Ω
3
■ Electrical Characteristics T
a
= 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse
Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
1
2
3
1
3
2
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current
Single
I
F
100
mA
Double
150
Peak forward
Single
I
FM
225
mA
current
Double
340
Non-repetitive peak
Single
I
FSM
500
mA
forward surge current
*
Double
750
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
D
E
■ Package
• Code
SSMini3-F3
• Pin Name
MA3S132DG
MA3S132EG
1: Cathode 1
1: Anode 1
2: Cathode 2
2: Anode 2
3: Anode
3: Cathode
■ Marking Symbol
MA3S132DG: MO
MA3S132EG: MU
■ Internal Connection