Panasonic MA3S7810G Specification Sheet
Schottky Barrier Diodes (SBD)
1
Publication date: October 2007
SKH00202AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S7810G
Silicon epitaxial planar type
For high speed switching
For wave detection
■ Features
• High-density mounting is possible
• Optimum for high frequency rectification because of its short
reverse recovery time t
rr
• Low forward voltage V
F
and good rectification efficiency
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Maximum peak reverse voltage
V
RM
30
V
Forward current
I
F
30
mA
Peak forward current
I
FM
150
mA
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125
°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
= 1 mA
0.4
V
V
F2
I
F
= 30 mA
1.0
Reverse current
I
R
V
R
= 30 V
300
nA
Terminal capacitance
C
t
V
R
= 1 V, f = 1 MHz
1.5
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 10 mA
1.0
ns
I
rr
= 1 mA, R
L
= 100 Ω
Detection efficiency
η
V
IN
= 3 V
(peak)
, f
= 30 MHz
65
%
R
L
= 3.9 kΩ, C
L
= 10 pF
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse
Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. *: t
rr
measurement circuit
■ Package
• Code
SSMini3-F3
• Pin Name
1: Anode
2: N.C.
3: Cathode
■ Marking Symbol: M1L
■ Internal Connection
1
2
3