Panasonic MA3U649 Specification Sheet

Fast Recovery Diodes (FRD)

1

Publication date:  February 2008

SKJ00014CED

This product complies with the RoHS Directive (EU 2002/95/EC).

MA3U649

Silicon planar type (cathode common)

For high-frequency rectification

■ Features

• Small U-type package for surface mounting

• Low-loss type with fast reverse recovery time t

rr

• Cathode common dual type

■ Absolute Maximum Ratings

D.U.T

t

rr

0.1 

× I

R

I

F

I

R

50 

Ω

5.5 

Ω

50 

Ω

Parameter

Symbol

Rating

Unit

Repetitive peak reverse voltage

V

RRM

200

V

Non-repetitive peak reverse

V

RSM

200

V

surge voltage

Forward current (Average) 

*1

I

F(AV)

5

A

Non-repetitive peak forward

I

FSM

40

A

surge current

 *2

Junction temperature

T

j

−40 to +150

°C

Storage temperature

T

stg

−40 to +150

°C

Note) *1: T

C

= 25°C

*2: Half sine-wave; 10 ms/cycle

■ Electrical Characteristics  T

a

= 25°C ± 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

= 2.5 A,  T

C

= 25°C

0.98

V

Repetitive peak reverse current

I

RRM1

V

RRM

= 200 V,  T

C

= 25°C

20

µA

I

RRM2

V

RRM

= 200 V,  T

j

= 150°C

2

mA

Reverse recovery time 

*2

t

rr

I

F

= 1 A,  I

R

= 1 A

30

ns

Thermal resistance (j-c) 

*1

R

th(j-c)

12.5

°C/W

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. *1: T

C

= 25°C

*2: t

rr

 measurement circuit

■ Package

• Code

U-G2

• Pin Name

1: Anode

2: Cathode (Common)

3: Anode