Panasonic MA5J002E Specification Sheet
Switching Diodes
1
Publication date: November 2003
SKF00061BED
MA5J002E
Silicon epitaxial planar type
For high speed switching circuits
■ Features
• Includes 4 elements of cathode common connection
• Parts reduction is possible
• Ideal for surge voltage absorption
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current
*1
I
F
100
mA
Peak forward current
*1
I
FM
225
mA
Non-repetitive peak forward
I
FSM
500
mA
surge current
*1, 2
Junction temperature
T
j
150
°C
Operating ambient temperature
T
opr
−25 to +105
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 100 mA
1.2
V
Reverse voltage
V
R
I
R
= 100 µA
80
V
Reverse current
I
R
V
R
= 75 V
100
nA
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
2
pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V
3
ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Marking Symbol: M5B
Note) *1: Value in single diode used.
*2: t
= 1 s
1: Anode 1
3: Anode 2
2: Cathode 1, 2, 3, 4
4: Anode 3
5: Anode 4
SMini5-F 1 Package
Internal Connection
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse
Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
1
4
2
3
5
(0.65) (0.65)
2.0
±0.1
0.7
±0.1
1.25
±
0.1
2.1
±
0.1
0.16
+0.1
–0.06
1
2
3
5
4
0.2
±0.05
(0.425)
5˚
(0.15)
5˚
0 to 0.1
This product complies with the RoHS Directive (EU 2002/95/EC).