Panasonic MALS180X Specification Sheet
Zener Diodes
Publication date: April 2008
SKE00044AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MALS180X
Silicon planar type
For ESD protection
Overview
MALS180X is optimal for cell phones and AV application, all types of
I/O circuits.
It is possible to protect against forward and reverse surges.
Features
High resistance to surge voltages: 15 kV guaranteed
Low terminal capacitance C
t
for low loss, low distortion, and good
retention of signal waveforms.
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak forward current
I
FRM
200
mA
Total power dissipation
*1
P
T
150
mW
Electrostatic discharge
*2
ESD
±
15
kV
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
-55 to +150
°
C
Note) *1: P
T
= 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330
Ω
, Contact discharge: 10 times)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Zener voltage
*
V
Z
I
Z
= 5 mA
17.5
20.0
V
Zene operating resistance
R
Z
I
Z
= 5 mA
60
Ω
Reverse current
I
R
V
R
= 13.0 V
15
nA
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
4
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25
°
C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25
°
C)
3. * : V
Z
guaranted 20 ms after current
fl
ow.
Package
Code
SSMini2-F1
Pin Name
1: Cathode
2: Cathode
Marking Symbol: SX