TDK Dualeta iQA Series Datasheet - page 9
Advance Data Sheet: Dualeta™ iQA Series – Dual Quarter Brick
©2002-2005 TDK Innoveta Inc.
iQAFullDatasheet080505 2.doc 8/3/2006
℡
(877) 498-0099
9/19
Electrical Data:
iQA48015A050M: 5V/3.3V, 15A Output
Characteristic
Min
Typ
Max
Unit
Notes & Conditions
Output Voltage Initial Setpoint
Vout1
Vout2
4.92
3.25
5
3.3
5.08
3.35
Vdc
Vdc
Vin=Vin,nom; Io=Io,max; Tc = 25˚C
Output Voltage Tolerance
Vout1
Vout2
4.85
3.2
5
3.3
5.15
3.4
Vdc
Vdc
Over all rated input voltage, load, and
temperature conditions to end of life
Efficiency
86*
87.5
---
%
Vin=Vin,nom; Io1=7.5A, Io2=7.5A;
Tc = 25˚C
Line Regulation
---
2
5*
mV
Vin=Vin,min to Vin,max
Load Regulation
---
5
15*
mV
Io=Io,min to Io,max
Temperature Regulation
---
10
75*
mV
Tc=Tc,min to Tc,max
Output Current
0
---
15
A
Sum of output currents, Io1+Io2
Output Current Limiting Threshold
---
17
---
A
Vo1 = 0.9*Vo,nom, Tc Short Circuit Current --- 3 --- A Vo = 0.25V, Tc = 25˚C; average output current in current limit hiccup mode --- --- 40 35 80 70 mVpp mvpp Output Ripple and Noise Voltage Vout1 Vout2 Vout1 Vout2 --- --- 10 10 --- --- mVrms mVrms Measured with 47uF Tantalum and 1uF ceramic external capacitance – see input/output ripple measurement figure; BW = 20MHz Output Voltage Adjustment Range Dual independent trim – standard Tracking trim option 1.5 90 --- --- 5.5 110 Vdc %Vout,nom Vout2
Either output %Vout,nom Dynamic Response: Recovery Time Transient Voltage --- --- 0.1 100 --- --- mS mV di/dt = 0.1A/uS, Vin=Vin,nom; load step from 50% to 75% of Io,max, either output Output Voltage Overshoot during startup Vout1 Vout2 --- --- 250 150 --- --- mV mV Io=Io,max,Tc=25˚C Switching Frequency --- 280 --- kHz Fixed Output Over Voltage Protection Dual independent trim – standard Vo1 Vo2 Tracking trim option Vo1 Vo2 5.6 --- 5.6 3.7 --- Vo1 --- --- 6.7* --- 7.5* 5.2* V V V V External Load Capacitance 0 --- 5000*& uF Isolation Capacitance --- 1000 --- pF Isolation Resistance 10 --- --- MΩ *Engineering Estimate & Contact TDK Innoveta for applications that require additional capacitance or very low ESR capacitor banks.